Memory properties of Al-based nanoparticle floating gate for nonvolatile memory applications

초록

In this work, a simple method for fabricating an Al-based nanoparticle (NP) floating gate is demonstrated and shown to produce floating gates suitable for nonvolatile memory applications. The Al-based NP floating gate was fabricated by thermally annealing a simple sandwich structure comprised of a thin Al film sandwiched between two silicon-oxide layers. The memory properties of the NPs for possible nonvolatile memory applications were investigated by using capacitance-voltage measurements on metal-oxide semiconductor capacitors. The capacitor was found to exhibit a large memory window of more than 10.4 V and a storage charge density of 4.4 x 10(12) cm(-2) suitable for nonvolatile memory applications.

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