Growth mode of Au layer on Si(001)

  • Kim, Kyung-seop
  • Kim, Y. W.
  • Park, No-gill
  • Cho, Won-seok
  • Choi, Daesun
  • 외 2명
Citations

SCOPUS

6

초록

We investigated the annealing effect on the behavior of Au atoms on the Si(001) surface using coaxial impact collision ion scattering spectroscopy. We found that the growth mode of Au atoms on Si(001) at room temperature is layer by layer growth, whereas Au atoms on Si(001) are transformed into three dimensional islands above 400°C. We found that the structure of the Au islands is a crystalline {001} orientation with the 〈110〉 direction aligned with a 〈100〉 direction in the substrate. The crystalline portion of the islands is about 42% of the top two atomic layers.

제목
Growth mode of Au layer on Si(001)
저자
Kim, Kyung-seopKim, Y. W.Park, No-gillCho, Won-seokChoi, DaesunKim, Sung-sooWhang, Chungnam
DOI
10.1016/0168-583X(96)00292-3
발행일
1996
유형
Article
저널명
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
117
3
페이지
289 ~ 294