Synthesis of SiOx Nanowires at Low Temperatures Using Zn Catalyst

초록

Amorphous silica nanowires (NWs) were synthesized by simply annealing Zn film at 380 degrees C for 10 min 10 silicon and oxygen chemical vapors produced by plasma-enhanced chemical vapor deposition technique using a mixture of SiH4 and N2O gas with fixed flow rates of 200 sccm and 60 sccm, respectively. The resulting NWs were shown to have a silicon-rich oxide (SiO1.34) phase with a mean diameter of about 250 nm. It was also found that the NWs emited light with its peak centered at 550 nm, consistent with that obserevd in silicon-rich oxide materials. It is proposed that the NWs are grown via ZnO-mediated vapor-solid process.

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