Activation Studies of Si-Implanted Al0.45Ga0.55N by Using Cathodoluminescence and Temperature-Dependent Hall-Effect Measurements

초록

Both optical and electrical activation studies of Si-implanted Al(0.45)ca(0.55)N for n-type conductivity have been made as a function of the ion dose and the anneal temperature by using cathodoluminescence (CL) and temperature-dependent Hall-effect measurements. Silicon ions were implanted at 200 keV with doses ranging from 1 x 10(14) to 1 x 10(15) cm(-2) at room temperature. The samples were subsequently annealed from 1150 to 1350 degrees C for 20 min in a nitrogen environment. The CL intensity of the near band emission increased as the annealing temperature was increased, showing a successive implantation damage recovery. These CL results coincide well with the results of the annealing temperature-dependent electrical activation study. The carrier concentration (activation efficiency) and the Hall mobility also increase with increasing annealing temperature.

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