Mosaic structure of various oriented grains in CoSi2/Si(001)

초록

We investigated the mosaic structure of CoSi<inf>2</inf>/Si(001) film in a synchrotron x-ray scattering experiment. The CoSi<inf>2</inf> film, formed by thermal reaction of a 120 Å Co film on Si(001), was composed largely of epitaxial grains of various orientations. In particular, the twin oriented (B-type) CoSi<inf>2</inf>(111) grains were grown epitaxially on the Si{111} facets that were generated during annealing. Two distinct mosaic structures were observed in the CoSi<inf>2</inf> grains; the epitaxial grains of the same orientation with the Si substrate, such as the CoSi<inf>2</inf>(001) [the CoSi<inf>2</inf>(111)] grains lying on the Si(001) [the Si{111} facets], showed a small mosaicity of ∼0.5° full width at half maximum (FWHM), while those of different orientations demonstrated a rather broad mosaicity of ∼2.5° FWHM. We attributed the smaller mosaicity of the epitaxial grains of the same orientation to the reduced interfacial energy due to higher coincidence site density. © 2000 American Vacuum Society.