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초록
Silicon field emitters have been coated with nitrogenated amorphous carbon (alpha-C:N) in order to enhance the electron emission current. The coating was produced using a helical resonator plasma enhanced chemical vapor deposition system. The alpha-C:N film is amorphous and hydrogenated with about 30 at % hydrogen. Nitrogen is also included in the amorphous network and reduces the work function by doping. alpha-C:N coating enhances significantly the emission current of silicon tips. (C) 1999 American Vacuum Society. [S0734-211X(99)05702-9].
키워드
FIELD-EMISSION; FILMS; EMITTERS; NITRIDE
- 제목
- Enhancement of electron emission from silicon tips by nitrogen doped amorphous carbon coating
- 저자
- Chi, EJ; Shim, JY; Baik, HK; Lee, HY; Lee, SM; Lee, SJ
- DOI
- 10.1116/1.590629
- 발행일
- 1999-03
- 유형
- Article; Proceedings Paper
- 권
- 17
- 호
- 2
- 페이지
- 731 ~ 733