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Luminescence properties of InAs quantum dots formed by a modified self-assembled method
- Kim, Hee Yeon;
- Ryu, Mee-Yi;
- Kim, Jin Soo
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5초록
The luminescence properties of self-assembled InAs quantum dots (QDs) on GaAs (1 0 0) substrates grown by molecular beam epitaxy have been investigated using temperature-dependent photoluminescence (PL) and time-resolved PL (TRPL). InAs QDs were grown using an In-interruption growth technique, in which the indium flux was periodically interrupted. InAs QDs grown using In-interruption showed reduced PL linewidth, redshifted PL emission energy, increased energy level spacing between the ground state and the first excited state, and reduced decay time, indicating an improvement in the size distribution and size/shape of QDs. (C) 2012 Elsevier B.V. All rights reserved.
키워드
InAs; Quantum dot; Photoluminescence; Time-resolved photoluminescence; TIME-RESOLVED PHOTOLUMINESCENCE; RADIATIVE RECOMBINATION LIFETIME; MOLECULAR-BEAM EPITAXY; TEMPERATURE-DEPENDENCE; OPTICAL-PROPERTIES; THRESHOLD; GROWTH; LASERS; EXCITONS; SPECTRA
- 제목
- Luminescence properties of InAs quantum dots formed by a modified self-assembled method
- 저자
- Kim, Hee Yeon; Ryu, Mee-Yi; Kim, Jin Soo
- 발행일
- 2012-07
- 유형
- Article
- 권
- 132
- 호
- 7
- 페이지
- 1759 ~ 1763
- 언어
- ENG
- 출판사
- ELSEVIER SCIENCE BV
- 발행국가
- 네덜란드
- 분량
- 5 페이지
- ISSN
- E 1872-7883
P 0022-2313