Direct growth of nickel disilicide nanocrystals in silicon dioxide films

초록

Nickel disilicide (NiS2) nanocrystals (NCs) have been grown in silicon-rich oxide (SiOx) films ion implanted with nickel by annealing at 1100 degrees C. It was found that NiS2 NCs grew into well-defined single crystalline structures embedded in a SiOx matrix and were approximately spherical in shape. The size of NCs can be influenced by limiting either the Ni or excess Si concentration. It was found that the resulting NCs could be produced with diameters in the range from 5 to 40 nm in the SiOx layers with excess Si concentrations of 4-8 at. % implanted with Ni concentrations of 0.1-10 at. %. (c) 2006 American Institute of Physics.

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