A 64-channel High-compliance Neural Stimulator IC in Standard CMOS with Sub-1nC Charge Balancing for Seizure Suppression

  • Cheon, Seokbeom
  • Lee, Seungah
  • Kim, Byeongseol
  • Bae, Joonsung
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초록

We present a 64-channel implantable neural stimulator with sub-nC charge-balanced current stimulation for seizure suppression applications. The regulated cascode current driver achieves almost full VDD compliance voltage range with 98% supply voltage utilization (4.9V from 5V) in standard 0.18 mu m CMOS technology, eliminating the need for expensive high-voltage processes. A passive charge balancing scheme using a bootstrapped switch with reduced on-resistance (19.56 Omega) maintains residual charge levels below 1 nC, well within the 15 nC safe limits, enabling reliable long-term operation. The stimulation parameters, including current pulse width (1 mu s-1023 mu s), channel activation, stimulation frequency, and current amplitude (1 mu A to 1.8 mA), are highly re-configurable through a 10 MHz SPI interface, enabling real-time adaptive stimulation protocols. The hierarchical 8 + 3-bit DAC architecture provides superior current resolution compared to existing single DAC systems while maintaining compact area efficiency of 0.0125 mm2 per channel. In-vivo animal experiments demonstrate effective seizure suppression, achieving seizure reduction within 14 seconds after 40 seconds of 5 Hz stimulation at 50 mu A amplitude, validating the therapeutic efficacy of the proposed system. The fabricated IC in 0.18 mu m standard CMOS process successfully combines high channel count, optimal compliance voltage utilization, enhanced safety margins, and in-vivo validation, making it suitable for practical implantable epilepsy treatment applications.

키워드

Neural stimulatorcharge balancingseizure suppressionCMOS integrated circuitsimplantable biomedical devices
제목
A 64-channel High-compliance Neural Stimulator IC in Standard CMOS with Sub-1nC Charge Balancing for Seizure Suppression
저자
Cheon, SeokbeomLee, SeungahKim, ByeongseolBae, Joonsung
DOI
10.5573/JSTS.2025.25.6.670
발행일
2025-12
유형
Article
저널명
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
25
6
페이지
670 ~ 678