Interfacial thermal resistance effect in self-aligned top-gate a-IGZO thin film transistors

초록

This study investigates the interfacial thermal resistance effect, primarily associated with the bottom-gate stack, in self-aligned top-gate amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). We analyze self-heating and heat transfer characteristics across three different a-IGZO TFT configurations: single-gate, dualgate type 1, and dual-gate type 2. Temperature maps, corresponding to various bias conditions, are acquired using infrared thermal microscopy. The extracted values of thermal resistance reveal a significant disparity between single- and dual-gate configurations. This suggests that the bottom-gate stack in a-IGZO TFTs, including the interfaces, notably impedes heat dissipation. These findings offer crucial insights into the power dissipation aspects of TFT technology, highlighting the importance of interfacial design for thermal management in advanced electronic devices.

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